Characterization Of THz-induced Bias Voltage Modulation In An STMPoster (MATL-P4)
Thu, 12 Nov 2020 01:15am to 03:00am
To understand and characterize the transient bias voltage induced by single-cycle terahertz pulses coupled to a scanning tunneling microscope (STM), the Bardeen tunneling model is applied to a 3-dimensional geometry of the STM junction. The simulated THz-induced tunneling current at the junction agrees well with that observed by THz-STM on a Cu(111) surface, providing a benchmark to quantify the THz-induced bias voltage at the tip-sample interface.
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Authors: Luo, Yang; M. Calzada, Jesus; Chen, Gong; Nguyen, Peter; Jelic, Vedran; Liu, Ray; Mildenberger, Daniel; Simpson, Howe; Hegmann, Frank
Michigan State University, University of Alberta, Zhengzhou University