Effect Of Doped Buffer In Low-Temperature-Grown GaAs Terahertz Photoconductive Antenna Emitters And Detectors

Poster (OPTO-P1)

Wed, 11 Nov 2020 01:15am to 03:00am

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Terahertz (THz) photoconductive antenna (PCA) fabricated on low-temperature-grown GaAs (LT-GaAs) with layer structure consisting of a doped buffer exhibited enhanced THz emission for LT-GaAs grown at lower temperature. As THz emitter, the LT-GaAs grown at 270C with doped buffer generated THz radiation with amplitude twice as that of its undoped counterpart. Similar effect is not observed when the LT-GaAs is grown at 320C with doped buffer, which is expected to have higher THz emission. As THz detector, both LT-GaAs with doped buffer exhibited identical and improved detection sensitivity regardless of the LT-GaAs growth temperature.

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Presenters and Authors Info

Presenter: Anonymous

Authors: Prieto, Elizabeth Ann; De Los Reyes, Alexander; Vistro, Victor DC Andres; Cabello, Neil Irvin; Faustino, Maria Angela; Ferrolino, John Paul; Vasquez, John Daniel; Bardolaza, Hannah; Afalla, Jessica Pauline; Mag-usara, Valynn Katrine; Kitahara, Hideaki; Tani, Masahiko; Somintac, Armando; Salvador, Arnel; Estacio, Elmer

Materials Science and Engineering Program, National Institute of Physics, Research Center for Development of Far-Infrared Region, University of Tsukuba