Effect Of Substrate Material On LT-GaAs Carrier Dynamics At 800 Nm
Poster (MATL-P4)Thu, 12 Nov 2020 01:15am to 03:00am
Carrier dynamics of two LT-GaAs layers grown using similar parameters, but on different substrates were studied. The behavior of the time-resolved terahertz transmission was observed to differ in trapping time constants, as well as in fluence-dependence. The differences are attributed to the difference in layer quality when using different substrates, wherein the use of silicon substrates result in increased structural defect density in the silicon substrate-grown layer, which provide additional scattering and non-recombination pathways, resulting in the reduced carrier lifetime
Presenter: Anonymous
Authors: Afalla, Jessica; Prieto, Elizabeth Ann; Catindig, Gerald Angelo; Gonzales, Karl Cedric; Mag-usara, Valynn Katrine; Hase, Muneaki; Somintac, Armando; Salvador, Arnel; Estacio, Elmer; Tani, Masahiko
Universitat Jaume, University of Fukui, University of the Philippines Diliman, University of Tsukuba