Fabrication And Characterization Of High Power Gallium Nitride Based Terahertz Gunn Diodes

Poster (ELEC-P1)

Thu, 12 Nov 2020 01:15am to 03:00am

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In this paper, we report the fabrication and characterization of a THz Gunn source based on Gallium Nitride (GaN) with side-contact and field-plate technologies. This source works stable at operating voltages up to 20 V due to good passivation layer and good heat sink to the GaN substrate. The GaN-based Gunn diode has relatively high forward current of 0.9 A and a high current drop of about 50 mA for higher frequency and output power.

Presenters and Authors Info

Presenter: Anonymous

Authors: Hajo, Ahid S.; Yilmazoglu, Oktay; Dadgar, Armin; K├╝ppers, Franko; Kusserow, Thomas

Otto von Guericke University Magdeburg, Technical University of Darmstadt