Fabrication And Characterization Of High Power Gallium Nitride Based Terahertz Gunn DiodesPoster (ELEC-P1)
Thu, 12 Nov 2020 01:15am to 03:00am
In this paper, we report the fabrication and characterization of a THz Gunn source based on Gallium Nitride (GaN) with side-contact and field-plate technologies. This source works stable at operating voltages up to 20 V due to good passivation layer and good heat sink to the GaN substrate. The GaN-based Gunn diode has relatively high forward current of 0.9 A and a high current drop of about 50 mA for higher frequency and output power.
Authors: Hajo, Ahid S.; Yilmazoglu, Oktay; Dadgar, Armin; Küppers, Franko; Kusserow, Thomas
Otto von Guericke University Magdeburg, Technical University of Darmstadt