Features Of Photothermal Ionization In Photoconducting Spectra Of Mid-Infrared Silicon Detectors Doped By Deep Selenium Double Donors

Paper (OPTO8)

Tue, 10 Nov 2020 06:15pm to 06:30pm

Room: Tesla

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The rate of photothermal activation of electrons bound to atomic and diatomic selenium centers in silicon has been influenced by an external electric bias. This resulted in varied relative intensities of intracenter transitions in low temperature photoconductive spectra. Usage of such optical transitions extend the light detection limit towards longer wavelengths up to 6.2 micrometer.

Presenters and Authors Info

Presenter: Anonymous

Authors: Pohl, Andreas; Pavlov, Sergey; Shuman, Valentina; Portsel, Leonid; Lodygin, Anatoly; Astrov, Yuri; Hübers, Heinz-Wilhelm

Institute of Optical Sensor Systems, German Aerospace Center (DLR), Institute of Physics, Humboldt University of Berlin, Ioffe Institute, Russian Academy of Sciences