infrared millimeter terahertz waves scientific conferences

Terahertz radiation characteristics were investigated for InAs/GaSb/InAs heterostructures by varying the thickness of the GaSb hot-electron injection layer between 5 and 50 nm. Monotonic increase in the radiation intensity was observed as the GaSb injection layer thickness was reduced. Enhanced radiation compared to InAs film without the GaSb injection layer occurred only for the GaSb layer thickness of 5 nm. We also studied the radiation intensity by introducing InGaSb injection layer, and found the superior enhanced radiation occurred even for the layer thickness of 20 nm.