Impact Of Optical Absorption For THz Radiation In GaSb/InAs Heterostructures

Poster (OPTO-P2)

Thu, 12 Nov 2020 01:15am to 03:00am

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Terahertz radiation characteristics were investigated for InAs/GaSb/InAs heterostructures by varying the thickness of the GaSb hot-electron injection layer between 5 and 50 nm. Monotonic increase in the radiation intensity was observed as the GaSb injection layer thickness was reduced. Enhanced radiation compared to InAs film without the GaSb injection layer occurred only for the GaSb layer thickness of 5 nm. We also studied the radiation intensity by introducing InGaSb injection layer, and found the superior enhanced radiation occurred even for the layer thickness of 20 nm.

Download Abstract: pid6391029.pdf

Presenters and Authors Info

Presenter: Anonymous

Authors: Ohashi, Ryota; Shimada, Daichi; Koyama, Masatoshi; Maemoto, Toshihiko; Sasa, Shigehiko; Murakami, Fumikazu; Murakami, Hironaru; Tonouchi, Masayoshi

Osaka Institute of Technology, Osaka University