infrared millimeter terahertz waves scientific conferences

In recent years, research and development of 300 GHz band by electronic devices has been activated by projects funded by Japanese Ministry of Internal Affairs and Communications (MIC), and the development of devices for 300 GHz communications were carried out, such as monolithic integrated circuits made by indium phosphide (InP), RF front-end by silicon complementary metal-oxide-semiconductor (CMOS) integrated circuits and the traveling wave tube amplifier for 300 GHz. This paper introduces these trends.