Longitudinal Optical Phonon Resonant THz – Mid Infrared Radiation From Surface Metal-Semiconductor MicrostructuresPaper (MM3)
Wed, 11 Nov 2020 03:30pm to 03:45pm
THz-mid infrared electric-dipole radiation resonating with longitudinal optical (LO) phonon energy is obtained from metal-semiconductor surface microstructures by heating samples for various types of semiconductors. The structures using undoped GaAs yield emission peaked at 8.5 THz, while n-type GaAs shows emission resonating LO phonon plasmon coupled (LOPC) modes. The emission from n+-GaP resonates with the LO phonon, but not the LOPC modes, which indicates the feasibility of THz emission by optical excitation using indirect transition type materials. The emission from GaInP presents two peaks, which indicates the feasibility of electromagnetically induced transparency toward optical gain.
Authors: Hayashi, Kotaro; Tanaka, Daichi; Ebisawa, keisuke; Aihara, Nozomi; Yonemoto, Takuto; Aye, HninLaiLai; Lin, Bojin; Ma, Bei; Morita, ken; Ishitani, Yoshihiro
Chiba, Chiba University, Chibau University