Low-NEP Room-Temperature Broadband THz Direct Detection With A 0.13-μM SiGe HBT Device
Paper (ELEC 2)Sat, 14 Nov 2020 12:45am to 01:00am
Room: Seneca
This paper reports on the influence of internal device parasitics of a high-speed SiGe HBT, its bias operation range, and circuit-antenna co-design aspects on frequency-dependent rectification efficiency of the room-temperature operated antenna-coupled THz direct detectors in 130-nm technology leading to their low-NEP operation in a near-THz fractional bandwidth. In particular, an optical NEP below 36 pW/sqrt(Hz) was measured across 220-1000 GHz for the single and dual linearly-polarized detectors with minimum NEP values of 1.9 pW/sqrt(Hz) at 292 GHz and 2.7 pW/sqrt(Hz) at 449 GHz for the former and the latter, respectively.
Download Abstract: pid6593171_0.pdf
Presenter: Anonymous
Authors: Grzyb, Janusz; Andree, Marcel; Jain, Ritesh; Heinemann, Bernd; Pfeiffer, Ullrich
IHP- Leibniz-Institut für Innovative Mikroelektronik, University of Wuppertal