Low-Temperature-Grown Gallium Arsenide Photoconductors With Photoresponse Reaching 25 MA/W Under 1550nm CW Excitation

Poster (OPTO-P3)

Fri, 13 Nov 2020 01:15am to 03:00am

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We show in this communication that photoconductors based on GaAs grown at low temperature can exhibit photoresponses as high as 25 mA/W under continuous-wave 1550-nm-wavelength illumination. It is achieved by using an optical Fabry-Pérot cavity in order to improve the external quantum efficiency and by decreasing the post growth annealing temperature down-to 450 °C.

Download Abstract: lt-gaas_annealingvf.pdf

Presenters and Authors Info

Presenter: Anonymous

Authors: Tannoury, Charbel; Billet, Maximilien; Coinon, Christophe; Lampin, Jean-François; Peytavit, Emilien