P-diamond Plasmonic TeraFET DetectorPoster (ELEC-P1)
Thu, 12 Nov 2020 01:15am to 03:00am
Hydrodynamic modeling of p-diamond, Si, InGaAs/GaAs, and AlGaN/GaN TeraFETs reveal the potential and advantages of p-diamond TeraFETs for applications in the 240 to 340 GHz band and, therefore, for potential Beyond 5G and IoT applications. Our numerical results show that the p-diamond TeraFET could enable resonant detection in this band in contrast to other material systems. The p-diamond TeraFET have a high detection sensitivity in a large dynamic range. The diamond response characteristics can be adjusted by changing the gate length L and tuning the gate bias.
Download Abstract: irmmw-thz_p-diamond_cw_11-10.pdf
Authors: Zhang, Yuhui; Shur, Michael
Rensselaer Polytechnic Institute