infrared millimeter terahertz waves scientific conferences

Hydrodynamic modeling of p-diamond, Si, InGaAs/GaAs, and AlGaN/GaN TeraFETs reveal the potential and advantages of p-diamond TeraFETs for applications in the 240 to 340 GHz band and, therefore, for potential Beyond 5G and IoT applications. Our numerical results show that the p-diamond TeraFET could enable resonant detection in this band in contrast to other material systems. The p-diamond TeraFET have a high detection sensitivity in a large dynamic range. The diamond response characteristics can be adjusted by changing the gate length L and tuning the gate bias.