P-diamond Plasmonic TeraFET Detector

Poster (ELEC-P1)

Thu, 12 Nov 2020 01:15am to 03:00am

Attend in Zoom

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Hydrodynamic modeling of p-diamond, Si, InGaAs/GaAs, and AlGaN/GaN TeraFETs reveal the potential and advantages of p-diamond TeraFETs for applications in the 240 to 340 GHz band and, therefore, for potential Beyond 5G and IoT applications. Our numerical results show that the p-diamond TeraFET could enable resonant detection in this band in contrast to other material systems. The p-diamond TeraFET have a high detection sensitivity in a large dynamic range. The diamond response characteristics can be adjusted by changing the gate length L and tuning the gate bias.

Download Abstract: irmmw-thz_p-diamond_cw_11-10.pdf

Presenters and Authors Info

Presenter: Anonymous

Authors: Zhang, Yuhui; Shur, Michael

Rensselaer Polytechnic Institute