Performance Of 1030nm Driven ErAs:InGaAs Photoconductive Receiver At High THz Average Power
Paper (OPTO7)Mon, 09 Nov 2020 06:30pm to 06:45pm
Room: Tesla
Event Picture:
We demonstrate a 1030 nm 520 fs-pulse-driven ErAs:InGaAs photoconductive receiver suitable for detecting 14 mW average THz power (
Download Abstract: irmmw_photoconductivereceiver.pdf
Presenter: Anonymous
Authors: Nandi, Uttam; Vogel, Tim; Mansourzadeh, Samira; Hoffmann, Martin; Norman, Justin; Gossard, Arthur C; Lu, Hong; Saraceno, Clara J; Preu, Sascha
Nanjing University, Rhur Universität Bochum, TU Darmstadt, University of California, Santa Barbara