Performance Of 1030nm Driven ErAs:InGaAs Photoconductive Receiver At High THz Average Power

Paper (OPTO7)

Mon, 09 Nov 2020 06:30pm to 06:45pm

Room: Tesla

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We demonstrate a 1030 nm 520 fs-pulse-driven ErAs:InGaAs photoconductive receiver suitable for detecting 14 mW average THz power ( 950 nJ pulse energy). To the knowledge of the authors, this is the highest detected pulsed THz power using photoconductive receivers reported so far. The current (field) responsivity of this receiver is in the range of 135-85 A/W yet with slight saturation.

Download Abstract: irmmw_photoconductivereceiver.pdf

Presenters and Authors Info

Presenter: Anonymous

Authors: Nandi, Uttam; Vogel, Tim; Mansourzadeh, Samira; Hoffmann, Martin; Norman, Justin; Gossard, Arthur C; Lu, Hong; Saraceno, Clara J; Preu, Sascha

Nanjing University, Rhur Universität Bochum, TU Darmstadt, University of California, Santa Barbara