Perspectives On Electrically Pumped Ge/SiGe QW Emitters At THz Frequencies

Paper (OPTO10)

Thu, 12 Nov 2020 05:30pm to 05:45pm

Room: Tesla

Attend in Zoom

The realization of a Ge/SiGe THz emitter is of great interest since it can help to reach room-temperature operation due to the peculiar electron-phonon interaction in nonpolar crystals. Here we present Ge/SiGe quantum-well building blocks grown by epitaxy on silicon wafers in order to understand limitations of this material platform in the perspective of realizing a Si-based laser.

Presenters and Authors Info

Presenter: Anonymous

Authors: Ciano, Chiara; Montanari, Michele; Persichetti, Luca; Stark, David; Scalari, Giacomo; Faist, Jérome; Di Gaspare, Luciana; Capellini, Giovanni; Corley, Cedric; Grange, Thomas; Birner, Stefan; Virgilio, Michele; Baldassarre, Leonetta; Ortolani, Michele; De Seta, Monica

ETH Zurich, IHP-Leibniz-Instut für innovative Mikroelektronik, Nextnano GmbH, Roma Tre, Sapienza University of Rome, Università di Pisa, University of Roma Tre