Photomixing THz Generation From Nitrogen-Ion-Implanted GaAs Metal-Semiconductor-Metal Diodes Enhanced By A Bragg MirrorPoster (OPTO-P3)
Fri, 13 Nov 2020 01:15am to 03:00am
We demonstrate that a nitrogen-implanted GaAs can be successfully implemented as a tunable, THz frequency range photomixer, optimized for the best performance for optical excitation on the 760-800 nm range. The latter was obtained by fabricating a metal-semiconductor-metal diode on top of a Bragg mirror structure and resulted in a clear enhancement of the THz radiation emission in photomixing experiments.
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Authors: Chen, Genyu; Mikulics, Martin; Adam, Roman; Pericolo, Anthony; Serafini, John; Preble, Stefan; Hardtdegen, Hilde H.; Sobolewski, Roman
Ernst Ruska Zentrum (ERC 2), Ernst Ruska-Centre (ER-C-2), Peter Grünberg Institute (PGI-6), Rochester Institute of Technology, University of Rochester