Quantum Dot Single Electron Transistors As Highly Sensitive Photodetectors At High Terahertz Frequencies
Poster (OPTO-P1)Wed, 11 Nov 2020 01:15am to 03:00am
Terahertz (THz) technology has recently demonstrated broad scientific and technological applications in different areas such as security monitoring, medical imaging, telecommunications and quantum science, where the need of fast and sensitive photodetectors prospects fascinating impacts in quantum computing and quantum metrology. In this work, we describe that quantum dot single electron transistors based on InAs/InAs0.3P0.7 heterostructured nanowires and planar on-chip nanoantennas, behave as highly sensitive quantum detector at 2.8 THz. The detector photoresponse can be tuned by playing with the electrical characteristics of the device that clearly reflect energy quantization and single-electron tunneling effects in the quantum dot.
Presenter: Anonymous
Authors: Asgari, Mahdi; Viti, Leonardo; Zannier, Valentina; Sorba, Lucia; Serena Vitiello, Miriam
CNR NANO INSTITUTE