Studies Of Terahertz Radiation From Optically Excited Indium Tin Oxide / Semi Insulating Gallium Arsenide Interface

Poster (OPTO-P3)

Fri, 13 Nov 2020 01:15am to 03:00am

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In this work, we observed enhanced terahertz emission from the interface between indium tin oxide (ITO) and semi-insulating gallium arsenide (SI-GaAs) substrate. Further, we investigated the dependence of THz emission on pump power and angle of incident excitation beam. We found more than 3 times of THz emission power enhancement for incident angle below 70. Besides, we found enhancement of THz radiation at low pump intensity and saturation with increasing peak excitation intensity beyond 20 TW/m^2. The experimental results are well explained by plasmonic effects at the metal-semiconductor interface.

Download Abstract: fintsocimtw-thz2020-4882966-posterpaperid4882973itothzemitter.pdf

Presenters and Authors Info

Presenter: Anonymous

Authors: Sahoo, Anup Kumar; Mai, Chia-Ming; Kang, Shih-Ying; Yu, Peichen; Pan, Ci-Ling

National Chiao Tung University, National Tsing Hua University