infrared millimeter terahertz waves scientific conferences

In this work, we observed enhanced terahertz emission from the interface between indium tin oxide (ITO) and semi-insulating gallium arsenide (SI-GaAs) substrate. Further, we investigated the dependence of THz emission on pump power and angle of incident excitation beam. We found more than 3 times of THz emission power enhancement for incident angle below 70. Besides, we found enhancement of THz radiation at low pump intensity and saturation with increasing peak excitation intensity beyond 20 TW/m^2. The experimental results are well explained by plasmonic effects at the metal-semiconductor interface.