Terahertz Emission In An Asymmetric Dual-Grating-Gate High-Electron Mobility Transistor Plasmonic Photomixer Under Dc Current Flow

Poster (ELEC-P1)

Thu, 12 Nov 2020 01:15am to 03:00am

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We report on terahertz (THz) emission from a current-driven asymmetric dual-grating-gate high-electron-mobility transistor (ADGG-HEMT) excited by photomixed dual-cw-infra- red laser irradiation whose difference frequency (ÃfffZÃff,Ãf,Ã,´f) was set around the THz plasmon-mode frequencies of the 2D electrons in the channel. The radiation spectra observed at 100K showed two distinctive emission components beyond the black- body radiation, one promoted by ÃfffZÃff,Ãf,Ã,´f-independent thermally excited incoherent plasmons and the other promoted by ÃfffZÃff,Ãf,Ã,´f-dependent coherent plasmons. The results suggest the occurrence of the plasmonic instability stimulated by the dc current flow in the channel.

Presenters and Authors Info

Presenter: Anonymous

Authors: Hosotani, Tomotaka; Satou, Akira; Otsuji, Taiichi

Research Institute of Electrical Communication, Tohoku University, RIEC, Tohoku University