Ultrafast, Broadband And Tunable THz Reflector Based On High Resistivity Silicon.Poster (MATL-P5)
Fri, 13 Nov 2020 01:15am to 03:00am
The evolution of the THz reflectivity of a high resistivity silicon wafer upon excitation by a femtosecond pulse centered at 800 nm is studied. Upon optical excitation, the THz reflectivity of silicon is increased within less than 1 ps and it can be tailored even beyond 90 % over a broad THz frequency range. Such variation is well accounted for by the pump pulse induced carriers within a thin layer on the surface of silicon.
Download Abstract: poster_2_irmmw-thz_hrsi_0.pdf
Authors: FREYSZ, Eric; Kumar, Sunil; Kumar, Sandeep; Singh, Arvind; Nivedan, Anand; Tondusson, Marc; Degert, Jerome; Abraham, Emmanuel
Department of Physics, Université de Bordeaux