This contribution presents a 0.26 THz power unit in a 0.13 m SiGe BiCMOS technology with…
In this paper, a thermal-insensitive multi-layer metamaterial absorber is proposed. The design is composed of two-layer…
This contribution presents a 0.26 THz power unit in a 0.13 m SiGe BiCMOS technology with…
In this paper, a thermal-insensitive multi-layer metamaterial absorber is proposed. The design is composed of two-layer…